Efficient positron moderation with a commercial 4H-SiC epitaxial layer

Temperature Dependence of Current Conduction in Semi-Insulating 4H-SiC Epitaxial Layer

Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC

The atomic force microscope (AFM) is used to study the morphology of graphene grown on 4H-SiC(0001̄). A mesh-like network of ridges with high curvature is revealed that bound atomically flat, tile-like facets of few-layer graphene (FLG). To further study the structural properties of the ridge network, nanomanipulation experiments are performed using an AFM tip to deform the ridges in both the ve...

Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface.

Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in ...

Experimental Determination of Electron-Hole Pair Creation Energy in 4H-SiC Epitaxial Layer: An Absolute Calibration Approach

Insights into few-layer epitaxial graphene growth on 4H-SiC(000(1)over-bar substrates from STM studies